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BAT74 14KESD10 1N5392G 1010C 1204C 05NU41 TC143Z 82000
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-220C package Complement to type MJE15028/30 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high-frequency drivers in audio amplifiers.
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
MJE15031
Absolute maximum ratings (Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER
IN

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CHA
E SEM NG
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE -150 -150 -5 -8 -16 -2
UNIT V V V A A A W
Open base Open collector
Collector current (DC) Collector current-Peak
Base current Ta=25ae Total power dissipation TC=25ae Junction temperature Storage temperature
2 50 150 -65~150 ae ae
THERMAL CHARACTERISTICS
SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT ae ae /W /W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-0.1A IC=-1A ; VCE=-2V VCB=-150V; IE=0 VCE=-150V; IB=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-3A ; VCE=-2V IC=-4A ; VCE=-2V 40 40 40 20 30 MIN -150
MJE15031
SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT
TYP.
MAX
UNIT V
-0.5 -1.0 -10 -0.1 -10 |I |I
V V A mA A
DC current gain DC current gain

CHA IN
Transition frequency
E SEM NG
OND IC
TOR UC
MHz
IC=-0.5A;VCE=-10V;f=10MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
MJE15031

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: A
0.10mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE15031

CHA IN
E SEM NG
OND IC
TOR UC
4


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